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Extra info for Advances in Electronics and Electron Phisics. Vol. 58

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CHURCHILL et 38 al. 14. Measured flat-band voltage versus applied gate bias for 500-A-thick oxide. Curve 1 , dose 4 x lo7 rads/point; curve 2, dose 4 x 10' rads/point. the charges will remain frozen in their previous locations and Vfb will not be able to change at all. This means that our previous statements concerning the absence of any history dependence cannot be considered to be an absolute pronouncement. Therefore, it is important to determine exactly the conditions under which history dependence can or cannot be neglected.

This is shown as point B. Several more increments of 3 x lo8 rads were absorbed by the device to determine if any further flat-band shift would occur. As can be seen, no + 40 J . N. CHURCHILL et al. significant change occurred and the device had, essentially, reached a dynamic equilibrium value. At point C the device was biased at - 10 V and given another 3 x 1Os-rad dose of ionizing radiation. 5 x 10” rads at a fixed value of V,, = -1OV. A few more incremental doses of 3 x lo8 rads each caused the device to follow the V,, = - 10 V curve to the right.

N. CHURCHILL et al. with any new experimental tests which might be suggested by mathematical analysis of the model. Some models might give accurate predictions over a wide range of experimental conditions while other models might give reasonable results over a narrow range of conditions only. There is nothing inherently “wrong” with a model which works only in a narrow dose range. As long as it gives accurate results in some well-defined range, it must be considered a valid model. Sometimes, because of simplicity, such a model might even be more useful than a more comprehensive model.

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